Muonium-acceptor interactions in gallium phosphide

Lichti R., Chow K., Davis E., Hitti B., Celebi Y. G., Cox S.

Physica B: Condensed Matter, cilt.326, ss.167-170, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 326
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0921-4526(02)01592-2
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.167-170
  • İstanbul Üniversitesi Adresli: Evet

Özet

Zero-field muon spin depolarization measurements on heavily Zn-doped p-type GaP reveal several different states related to the Mu(+) defect center. We find that the Mu(BC)(+) ground state becomes mobile near 200 K. At slightly higher temperature Mu+ motion involves a second site, suggested to be T(P), which is relatively long lived up to 270 K. Zn-Mu complexes are formed at both low and high temperatures by reaction of Zn with a mobile Mu center, Mu(T)(0) below 100 K and Mu(T)(+) above 400 K. The high-temperature complex dissociates above 700 K with a characteristic energy of 1.3 eV. (C) 2002 Elsevier Science B.V. All rights reserved.