A Numerical Procedure to Determine the Power Intake/Delivery Capacity of a GaN RF Power Transistor over Broadband

KILINÇ S., Ejaz M. E., Yarman S. B., Ozoguz S., Srivastava S., Nurellari E.

21st Mediterranean Microwave Symposium (MMS), İtalya, 9 - 13 Mayıs 2022, ss.390-395 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/mms55062.2022.9825519
  • Basıldığı Ülke: İtalya
  • Sayfa Sayıları: ss.390-395
  • Anahtar Kelimeler: Positive Real Functions, Foster Functions, Minimum Functions, Real Frequency Techniques, Broadband Matching, Gain-Bandwidth Limitation, Broadband Power Amplifier, GaN Transistor, AMPLIFIER
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this paper, a novel "Real Frequency Line Segment Technique" based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called "Virtual Gain Optimization" is presented. Finally, a new definition called "Power-Performance-Product" is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed "CG2H40045" over 0.8-3.8 GHz bandwidth.