Few-layer MoTe 2 -based Photodetector

Sarcan F., Wang Y.

6th INTERNATIONAL APPLIED SCIENCE CONGRESS, Van, Türkiye, 21 - 23 Mayıs 2021, ss.1

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Van
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.1
  • İstanbul Üniversitesi Adresli: Evet

Özet

2D MoTe2 is highly attractive material due to its band gap of 1 eV which is compatible with near infrared optoelectronic applications such as LED, laser, photodetector. We present the fabrication details and performance of a metal- MoTe2 -metal photodetector. We observed two main absorptions at 1 eV and 1.75 eV which are bandgap and high energy transition of few layer MoTe2. The dark current of photodetector is about 1 pA at applied bias of 3 V and the photocurrent of the devices is about 1 𝜇𝐴 under 6 mW excitation power. We concluded that few layer- MoTe2 based MSM photodetector can be an alternative for its III-V group material-based counterparts.