Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Gunn Oscillations in n-type InGaAs Epilayer Structures

INTERNATIONAL GRADUATE RESEARCH SYMPOSIUM, 1 - 03 Haziran 2022, ss.332 Creative Commons License

Gunn Effect in InGaAs Epilayer Structures

16th NANOSCIENCE & NANOTECHNOLOGY CONFERENCE, Ankara, Türkiye, 5 - 08 Eylül 2022, ss.67 Creative Commons License

Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Türkiye, 15 - 17 Aralık 2021, ss.135

Optical and electrical characterızatıon of InGaAs epitaxial layers

3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Türkiye, 15 - 17 Aralık 2021, ss.137

Hot Electron transport based devices for optoelectonics

international conference on condensed matter and materials science, Adana, Türkiye, 11 - 15 Ekim 2017, ss.21

Evolution of HELLISH devices: Colurful story of HELLISH devices from IR to VIS light

The physics of optoelectronic materials and devices, Essex, Birleşik Krallık, 27 - 28 Mart 2017, ss.41

Light Emission from Al0.08Ga0.92As Gunn Device

Nanophotonics and Micro/Nano Optics International Conference, Paris, Fransa, 1 - 10 Aralık 2016, ss.10

Stimulated Light Emission from Gunn Domains in Fabry Pérot Al0.08 Ga0.92As Gunn Device

Turkish Pyhsical Society 32nd International Pyhsics Congress, Muğla, Türkiye, 6 - 10 Eylül 2016, ss.89

INVESTIGATION OF ELECTRONIC TRANSPORT PROPERTIES IN GaInNAs/GaAs QUANTUM WELL STRUCTURES

Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016, cilt.32, ss.129

Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.125

Electronic transport properties of p-type GaInNAs/GaAs quantum well structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.125

Investigation of Light Emission Based on Gunn Effect in n –type GaAs

9th International Physics Conference of the Balkan Physical Union, İstanbul, Türkiye, 24 - 27 Ağustos 2015, ss.421

Weak Localization and Weak Antilocalization in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

İstanbul Üniversitesi Dünya Teknoloji, İnovasyon ve Girişimcilik Konferansı, İSTANBUL, TÜRKIYE, 28-30 Mayıs 2015, İstanbul, Türkiye, 28 - 30 Mayıs 2015, ss.80

High Field Hot Electron Energy Relaxation in InGaN/GaN Samples

Scientific final meeting of the COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds), İstanbul, Türkiye, 24 - 26 Ekim 2013, ss.14

Hot Electron Energy Relaxation in Al 0.83 In 0.17 N/AlN/GaN heterostructure

Scientific final meeting of the COST-MP0805 action, İstanbul, Türkiye, 24 - 26 Ekim 2013, ss.1

Metrikler

Yayın

28

Atıf (WoS)

43

H-İndeks (WoS)

4

Atıf (Scopus)

48

H-İndeks (Scopus)

4

Proje

11

Fikri Mülkiyet

2

Açık Erişim

17
BM Sürdürülebilir Kalkınma Amaçları